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AP50G60SW N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP50G60SW Description

Advanced Power Electronics Corp.AP50G60SW RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR .

AP50G60SW Features

* ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.6V@IC=33A ▼ Built-in Fast Recovery Diode G C E C VCES IC TO-3P G Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Collector-Emitter Voltage Gate-Emitter

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Datasheet Details

Part number
AP50G60SW
Manufacturer
Advanced Power Electronics
File Size
91.84 KB
Datasheet
AP50G60SW-AdvancedPowerElectronics.pdf
Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics
Advanced Power Electronics AP50G60SW-like datasheet