Datasheet4U Logo Datasheet4U.com

AP4953D - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

📥 Download Datasheet

Datasheet preview – AP4953D

📁 Similar Datasheet

  • AP4936M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Technology)
  • AP494 - VOLTAGE MODE PWM CONTROLLER (Etc)
  • AP4 - Acorn Pentode (Mullard)
  • AP400-B10 - AC Current transducer AP-B10 (LEM)
  • AP400-B420L - AC Current transducer AP-B420L (LEM)
  • AP400N08TLG1 - 85V N-Channel Enhancement Mode MOSFET (APM)
  • AP4010 - High Performance IR Enhanced P-Type Silicon Photodiodes (Antel Optronics)
  • AP4025 - High Performance IR Enhanced P-Type Silicon Photodiodes (Antel Optronics)
  • AP4048 - Cascadable Amplifiers (Cougar Components)
  • AP4048 - 1000 TO 4000 MHz TO-8 & TO-8B CASCADABLE AMPLIFIERS (ETC)
Other Datasheets by Advanced Power Electronics
  • AP4953GM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4953GM-HF - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4953M - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4951GM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4951GM-HF - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4951GM-HF-3 - Dual P-channel Enhancement-mode Power MOSFETs
  • AP4955GM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4955GM-HF - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com AP4953D Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching G2 D1 D1 D2 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53mΩ -5A PDIP-8 S2 G1 S1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 ±20 -5 -4 - 20 2 0.
Published: |