AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate Charge Fast Switchin.
G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an.

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AP4951GM-HF-3 Datasheet Preview — Preview of AP4951GM-HF-3 PDF

Datasheet Specifications

Part number: AP4951GM-HF-3
Manufacturer: Advanced Power Electronics
File Size: 85.84 KB
Datasheet: AP4951GM-HF-3-AdvancedPowerElectronics.pdf
Description: Dual P-channel Enhancement-mode Power MOSFETs

Applications

* G2 S1 S2 D2 D2 D1 D1 SO-8 (M) G2 S2 G1 S1 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear

AP4951GM-HF-3 Distributors

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AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Advanced Power Electronics

Advanced Power Electronics AP4951GM-HF-3-like datasheet