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AP2608GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP2608GY RoHS-compliant Product Advanced Power Electronics Corp.▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile .
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes.

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Datasheet Specifications

Part number
AP2608GY
Manufacturer
Advanced Power Electronics
File Size
54.73 KB
Datasheet
AP2608GY-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 150 +20 0.57 0.45 2 2 0.016 -55 to 150 -55 to 15

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