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AP2310GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP2310GN Pb Free Plating Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device S D N-CH.
SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-.

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Datasheet Specifications

Part number
AP2310GN
Manufacturer
Advanced Power Electronics
File Size
99.92 KB
Datasheet
AP2310GN_AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Parameter Rating 60 ±20 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Cu

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