AP02N70EI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP02N70EI RoHS-compliant Product Advanced Power Electronics Corp.▼ 100% Avalanche Test ▼ ESD Improved Capability ▼ Simple Drive Requirement G N-CHA.
AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: AP02N70EI
Manufacturer: Advanced Power Electronics
File Size: 124.12 KB
Datasheet: AP02N70EI-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 ±20 1.6 1 6.4 27.8 2 Units

AP02N70EI Distributors

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AP02N70EI N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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