AP02N60H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP02N60H/J www.DataSheet4U.com Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.▼ Low Gate Charge ▼ .
G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters.

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Datasheet Specifications

Part number: AP02N60H
Manufacturer: Advanced Power Electronics
File Size: 94.27 KB
Datasheet: AP02N60H_AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous

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AP02N60H N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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