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AP02N40P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial applications.

The good thermal performance and low package cost, Contribute to its wide industry application.

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Full PDF Text Transcription

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AP02N40P RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 400V 5Ω 1.6A S Description AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial applications. The good thermal performance and low package cost, Contribute to its wide industry application. G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +30 1.
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