AP01N40J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP01N40J RoHS-compliant Product Advanced Power Electronics Corp.▼ Lower Gate Charge ▼ 100% Avalanche Rated ▼ Fast Switching Performance ▼ Simple Dri.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost.

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Datasheet Specifications

Part number: AP01N40J
Manufacturer: Advanced Power Electronics
File Size: 61.67 KB
Datasheet: AP01N40J-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 ±20 0.5 0.4 2 17.4 0.14 2 Units V

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AP01N40J N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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