Datasheet4U Logo Datasheet4U.com

AP01L60AT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.

The TO-92 package is widely used for commercial-industrial applications.

📥 Download Datasheet

Datasheet preview – AP01L60AT

📁 Similar Datasheet

  • AP01 - 8 Channel Power MOSFET (Supertex Inc)
  • AP0100CS - High-Dynamic Range (HDR) Image Signal Processor (Aptina)
  • AP0100CS - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)
  • AP0101 - High-Dynamic Range (HDR) Image Signal Processor (Aptina)
  • AP0101CS - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)
  • AP0116 - 8 Channel Power MOSFET (Supertex Inc)
  • AP0116NA - 8 Channel Power MOSFET (Supertex Inc)
  • AP0116NB - 8 Channel Power MOSFET (Supertex Inc)
  • AP0116ND - 8 Channel Power MOSFET (Supertex Inc)
  • AP0116WG - 8 Channel Power MOSFET (Supertex Inc)
Other Datasheets by Advanced Power Electronics
  • AP01L60H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP01L60H-A-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP01L60H-H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP01L60H-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP01L60J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP01L60J-A-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP01L60J-H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP01L60J-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12Ω 160mA Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-92 package is widely used for commercial-industrial applications. G TO-92 D S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 ± 30 160 100 300 0.
Published: |