HSCH-5314 - Beam Lead Schottky Diodes

AVAGO

Datasheet Details

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Platinum tri-metal system High temperature stability.
Silicon nitride passivation Stable, reliable performance.
Low noise figure Guaranteed 7.5 dB at 26 GHz.
High uniformity Tightly controlled process insures uniform RF characteristics.
Rugged construction 4 grams minimum lead pull.
Low capacitance 0.10 pF max. at 0 V.
Polyimide scratch protection The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Eq.

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Published: Dec 8, 2014 |