Description
Base Emitter Collector
1
1.4 0.9
3
3
0.2 0.11
2
0.6
0~0.1
6
Features
- igh gain bandwidth product fT = 8 GHz at VCE = 3 V, IC = 7 mA fT = 9 GHz at VCE = 3 V, IC = 20 mA - High power gain - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz |S21|2 = 11.4 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz
0.90±0.1
Pin Configuration 1. Base 2. Emitter 3. Collector.
- Absolute Maximum Ratings (TA = 25 ℃)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Tempera.
TBN4227_AUK.pdf
