SMNY2Z30 - Advanced N-Ch Power MOSFET

AUK

Datasheet Details

High voltage: BVDDS=300V (Min. ).
Low gate charge: Qg=2.9nC (Typ. ).
Low drain-source On resistance: RDS(on)=8Ω (Max. ).
Built-in protection zener diode.
RoHS compliant device Ordering Information Part Number Marking Package SMNY2Z30 SMNY2Z30 TO-92 GDS TO-92 Marking Information SMNY 2Z30 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (Ta=25C unless otherwise noted) Characteristic.

📁 SMNY2Z30 Similar Datasheet

SMN0665FL - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMN18T50FD - Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SMNZ - Ultra High Precision Z-Foil Surface Mount 4 Resistor Network (Vishay)

Other Datasheets by AUK

Published: Jan 13, 2017 |