OPA7740EDD Datasheet (AUK) - Infrared LED Chip

OPA7740EDD, Infrared LED Chip

OPA7740EDD Infrared LED Chip AlGaAs / GaAs 1.

Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs (P/N Type) 2.

Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3.

Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 2.1 V IF=350mA Reverse Current VR 4 V IR=10uA Power PO 17 mW IF=350mA Wavelength λP 770 ∆λ 30 nm IF=50mA nm IF=50mA ※ Note : LED chip is mounted on TO-18 gold header without resin coatin 4.

Mechani