Description
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each.
Features
- Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns.
- Internal Erase/Program Control.
- Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds.
- Word-By-Word Programming - 10 µs/Word Hardware Data Protection.
- DATA Polling For End Of Program Detec.