Description
The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.
Features
- 2.7V to 3.6V Read/Write Operation.
- Fast Read Access Time - 120 ns.
- Internal Erase/Program Control.
- Sector Architecture.
- One 8K Words (16K bytes) Boot Block with Programming Lockout.
- Two 4K Words (8K bytes) Parameter Blocks.
- One 240K Words (480K bytes) Main Memory Array Block.
- Fast Sector Erase Time - 10 seconds.
- Byte-by-Byte or Word-By-Word Programming - 30 µs Typical.
- Hardware Data Protection.
- DA.