Datasheet4U Logo Datasheet4U.com

AT90PWM216 - 8-bit Microcontroller

General Description

Table 2-1.

Key Features

  • High Performance, Low Power AVR® 8-bit Microcontroller.
  • Advanced RISC Architecture.
  • 129 Powerful Instructions - Most Single Clock Cycle Execution.
  • 32 x 8 General Purpose Working Registers.
  • Fully Static Operation.
  • Up to 1 MIPS throughput per MHz.
  • On-chip 2-cycle Multiplier.
  • Data and Non-Volatile Program Memory.
  • 16K Bytes Flash of In-System Programmable Program Memory.
  • Endurance: 10,000 Write/Erase Cycles.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AT90PWM161 8-bit Microcontroller ATMEL
AT90PWM81 8-bit Microcontroller ATMEL
AT90-0001 Digital Attenuator/ 31.0 dB/ 5-Bit/ TTL Driver/ DC-6.0 GHz Tyco Electronics
AT90-0106 Digital Attenuator/ 50 dB/ 6-Bit/ TTL Driver/ DC-2.4 GHz Tyco Electronics
AT90-0107 Digital Attenuator/ 31.5 dB/ 6-Bit/ TTL Driver/ DC-4.0 GHz Tyco Electronics

Other Datasheets by Atmel (Microchip)

Part Number Description
AT90PWM2 8-bit Microcontroller
AT90PWM2B 8-bit Microcontroller
AT90PWM1 8-bit Microcontroller
AT90PWM3 8-bit Microcontroller
AT90PWM316 8-bit Microcontroller

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Atmel 8-bit Microcontroller with 16K Bytes In-System Programmable Flash AT90PWM216 /AT90PWM316 Features • High Performance, Low Power AVR® 8-bit Microcontroller • Advanced RISC Architecture – 129 Powerful Instructions - Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation – Up to 1 MIPS throughput per MHz – On-chip 2-cycle Multiplier • Data and Non-Volatile Program Memory – 16K Bytes Flash of In-System Programmable Program Memory • Endurance: 10,000 Write/Erase Cycles – Optional Boot Code Section with Independent Lock Bits • In-System Programming by On-chip Boot Program • True Read-While-Write Operation – 512 Bytes of In-System Programmable EEPROM • Endurance: 100,000 Write/Erase Cycles – 1024 Bytes Internal SRAM – Programming Lock for Flash