AP8G02LI - 20V N+P-Channel Enhancement Mode MOSFET

Product Overview

APM

AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET by APM - Datasheet Preview — Datasheet preview – AP8G02LI

Datasheet Details

Part number	AP8G02LI
Manufacturer	APM
File Size	1.44 MB
Description	20V N+P-Channel Enhancement Mode MOSFET
Datasheet	AP8G02LI Datasheet
Additional preview pages of the AP8G02LI datasheet.

Product details

Description

AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a Battery protection or in other Switching application.General

Features

VDS = 20V ID =8.5A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -20V ID =-7.8A RDS(ON) < 38mΩ @ VGS=-10V（Type：28mΩ）.

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Published: Mar 4, 2025 |