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AP4N90Y - 900V N-Channel Enhancement Mode MOSFET

Download the AP4N90Y datasheet PDF. This datasheet also covers the AP4N90D variant, as both devices belong to the same 900v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • VDS = 900V ID =4.0A RDS(ON) < 3500mΩ @ VGS=10V （Type：3000mΩ）.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP4N90D-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AP4N90Y
Manufacturer APM
File Size 1.53 MB
Description 900V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP4N90Y Datasheet

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Other Datasheets by APM

Part Number Description
AP4N90D 900V N-Channel Enhancement Mode MOSFET
AP4N10MSI 100V N-Channel Enhancement Mode MOSFET
AP4N25MI 250V N-Channel Enhancement Mode MOSFET
AP4N65D 650V N-Channel Enhancement Mode MOSFET
AP4N65Y 650V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

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AP4N90DIY 900V N-Channel Enhancement Mode MOSFET Description The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 900V ID =4.
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