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AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET

AP30G04NF Description

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AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET The AP30G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and op.

AP30G04NF Applications

* , should be limited by total power dissipation 2 AP30G04NF REV1.0 AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS △BVDSS/△TJ Parameter Drain-Source Breakdown Voltage BVDSS Temperature Coefficient RDS(ON) Static Drai

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Datasheet Details

Part number
AP30G04NF
Manufacturer
APM
File Size
1.10 MB
Datasheet
AP30G04NF-APM.pdf
Description
40V N+P-Channel Enhancement Mode MOSFET

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40V N +P-Channel Enhancement Mode MOSFET APM
APM AP30G04NF-like datasheet