AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET

APM

Description

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AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET The AP30G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and op.

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Datasheet Specifications

Part number: AP30G04NF
Manufacturer: APM
File Size: 1.10 MB
Datasheet: AP30G04NF-APM.pdf
Description: 40V N+P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation 2 AP30G04NF REV1.0 AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS △BVDSS/△TJ Parameter Drain-Source Breakdown Voltage BVDSS Temperature Coefficient RDS(ON) Static Drai

AP30G04NF Distributors

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AP30G04NF 40V N +P-Channel Enhancement Mode MOSFET APM

APM AP30G04NF-like datasheet