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AP100N03BD 30V N-Channel Enhancement Mode MOSFET

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Description

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AP100N03BD 30V N-Channel Enhancement Mode MOSFET The AP100N03BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and op.

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Datasheet Specifications

Part number
AP100N03BD
Manufacturer
APM
File Size
1.63 MB
Datasheet
AP100N03BD-APM.pdf
Description
30V N-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. Max. Unit
* - V 4.5 mΩ 6.5 2.5 V
* - mV/℃ 1 uA 5 ±100 nA
* - S 3.4 Ω
* -
* - nC
* -
* -
* ns
* -
* -
* -
* - pF
* - 100 A 400 A 1.2 V

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