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AWT6301R - LINEAR POWER AMPLIFIER

Description

The AWT6301R meets the increasing demands for higher efficiency and linearity in CDMA1X handsets.

The package pinout was chosen to enable handset manufacturers to switch from a 4mm x 4mm PA module with very few layout changes to the phone board.

Features

  • InGaP HBT Technology.
  • High Efficiency: 40%, VMODE = 0 V 41%, VMODE = +2.85 V (no mode switching).
  • Low Quiescent Current: 50 mA.
  • Low Leakage Current in Shutdown Mode:.

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Datasheet Details

Part number AWT6301R
Manufacturer ANADIGICS
File Size 392.95 KB
Description LINEAR POWER AMPLIFIER
Datasheet download datasheet AWT6301R Datasheet
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Full PDF Text Transcription

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Cellular CDMA 3.4 V/28 dBm Linear Power Amplifier Module Data Sheet - Rev 2.0 AWT6301R FEATURES • InGaP HBT Technology • High Efficiency: 40%, VMODE = 0 V 41%, VMODE = +2.85 V (no mode switching) • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA • VREF = +2.85 V (+2.75 V Min Over Temp.) • Optimized for a 50 Ω System • Low Profile Surface Mount Package: 1.1mm • CDMA 1XRTT, 1xEV-DO Compliant • Pinout Enables Easy Phone Board Migration From 4 mm x 4 mm Package • RoHS Compliant Package, 250 oC MSL-3 APPLICATIONS • CDMA/EVDO Cell-band Wireless Handsets and Data Devices M9 Package 8 Pin 3 x 3 x 1 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6301R meets the increasing demands for higher efficiency and linearity in CDMA1X handsets.
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