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RASJ810 - CMOS Gate Array Memory

Description

This 256x8 SRAM block is built into AMI's base arrays.

When your application requires static RAM memory, use these RAMs.

The self timed feature of this RAM allows flexibility in the clock duty cycle while maintaining fast cycle times.

Features

  • Self-timed design allows flexibility in clock duty cycle while maintaining fast cycle time.
  • 256 x 8 instantiation block.
  • Always active outputs.
  • Low standby power when the clock is stopped.
  • Separate input and output ports with full parallel access.
  • Altera Flex10 equivalent functionality.
  • Precharged design for faster operation with lower power consumption FIGURE 1: LOGIC SYMBOL RASJ810 CLK RASJ810: High Speed Low-Power Single Port De.

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Datasheet Details

Part number RASJ810
Manufacturer AMI
File Size 57.68 KB
Description CMOS Gate Array Memory
Datasheet download datasheet RASJ810 Datasheet

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Full PDF Text Transcription

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5$6- ® +LJK 6SHHG /RZ3RZHU 6LQJOH 3RUW $0,+*  PLFURQ &026 *DWH $UUD 0HPRULHV Features • Self-timed design allows flexibility in clock duty cycle while maintaining fast cycle time • 256 x 8 instantiation block • Always active outputs • Low standby power when the clock is stopped • Separate input and output ports with full parallel access • Altera Flex10 equivalent functionality • Precharged design for faster operation with lower power consumption FIGURE 1: LOGIC SYMBOL RASJ810 CLK RASJ810: High Speed Low-Power Single Port Description This 256x8 SRAM block is built into AMI's base arrays. When your application requires static RAM memory, use these RAMs. The self timed feature of this RAM allows flexibility in the clock duty cycle while maintaining fast cycle times.
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