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AGM40P26AP - MOSFET

Description

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM40P26AP
Manufacturer AGMSEMI
File Size 1.22 MB
Description MOSFET
Datasheet download datasheet AGM40P26AP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AGM40P26AP ● General Description The AGM40P26AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -40V RDSON 32mΩ PDFN3*3 Pin Configuration ID -6.0A Package Marking and Ordering Information Device Marking Device AGM40P26AP AGM40P26AP Device Package PDFN3*3 Reel Size ---- Tape width ---- Quantity 5000 Table 1.
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