AGM210S Datasheet - AGMSEMI

AGM210S MOSFET

AGM210S Features

* BVDSS RDSON ID 20V 8.5mΩ 10A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching SOP8 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Application

Datasheet Details

AGM210S

AGMSEMI

558.98 KB

Mosfet.

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