SSC8428GSB Datasheet (AFSEMI) - Dual N-Channel Enhancement Mode MOSFET

SSC8428GSB, Dual N-Channel Enhancement Mode MOSFET

The SSC8428GSB combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

SOT23-6 * Package Information ⑥ ⑤④ ①② ③ SSC-1V0 Units:mm SOT23-6L http://www.afsemi.com 1/5

SSC8428GSB Features

* VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 7.5A

* Applications

* Li-ion battery protection

* Load switch

* Pin configuration Top View Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Cha