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SSC8339GS1 - Dual P-Channel Enhancement Mode MOSFET

SSC8339GS1 Description

SSC8339GS1 Dual P-Channel Enhancement Mode MOSFET * .
Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resista.

SSC8339GS1 Features

* VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A

SSC8339GS1 Applications

* Load Switch
* DCDC conversion
* NB battery
* Pin configuration

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Datasheet Details

Part number
SSC8339GS1
Manufacturer
AFSEMI
File Size
320.12 KB
Datasheet
SSC8339GS1-AFSEMI.pdf
Description
Dual P-Channel Enhancement Mode MOSFET

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Dual P-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8339GS1-like datasheet