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ADM60N03E - N-Channel MOSFET

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Datasheet Details

Part number ADM60N03E
Manufacturer ADV
File Size 597.63 KB
Description N-Channel MOSFET
Datasheet download datasheet ADM60N03E Datasheet

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Full PDF Text Transcription

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ADV ADM60N03E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 60A RDS(ON) (mΩ) 8.5mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Ratings Unit Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current 30 V ±20 175 °C -55 to 175 °C TC=25°C 60 A Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ TC=25°C 110 A ID Continuous Drain Current TC=25°C 60 A TC=100°C 40 A PD Maximum Power Dissipation TC=25°C 41 W 1. Pulse width limited by maximum junction temperature.
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