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ADV
ADM105N03E
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 30V
ID 105A
RDS(ON) (mΩ) 4.0mΩ
TO252
2
1 2 3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDM
300μs Pulse Drain Current Tested⑴
TC=25°C
ID
Continuous Drain Current
TC=25°C
PD
Maximum Power Dissipation
1. Pulse width limited by maximum junction temperature.
ADM105N03E Datasheet
