ACE5213A - P-Channel MOSFET

ACE Technology

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Datasheet Details

Part number	ACE5213A
Manufacturer	ACE Technology
File Size	434.02 KB
Description	P-Channel MOSFET
Datasheet	ACE5213A-ACETechnology.pdf

ACE5213A Product details

Description

The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed

Features

P-Channel -20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Nov 2, 2016 |