PE60N70 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V
(Typ:10.2mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdso.
General Features
* VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V
(Typ:10.2mΩ)
* Special process technology for .
The PE60N70 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V
(Typ:10.2mΩ)
* Specia.
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