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PE4953 - P-Channel Enhancement Mode Power MOSFET

Description

The PE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Datasheet Details

Part number PE4953
Manufacturer semi one
File Size 727.81 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4953 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE4953 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.
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