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PE4953 Datasheet Preview

PE4953 Datasheet

P-Channel Enhancement Mode Power MOSFET

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PE4953
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE4953 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
VDS = -30V,ID = -5.3A
RDS(ON) < 100m@ VGS=-4.5V
RDS(ON) < 49m@ VGS=-10V
D1
G1
G2
D2
S1 S2
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOP-8 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
Limit
-30
±20
-5.3
-20
2.6
-55 To 150
Unit
V
V
A
A
W
49 /W
Min Typ Max Unit
-30 -33
--
-
-1
V
μA
WWW.SEMI-ONE.COM
Page 1




semi one

PE4953 Datasheet Preview

PE4953 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
PE4953
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
VDS=-15V,ID=-4.5A
-1 -1.6
-3
- 43 49
- 68 100
47
-
V
m
m
S
Clss
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
- 540
- 150
-
-
PF
PF
Crss
- 75
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=6
VDS=-15V,ID=-5.3A,VGS=-10V
-
-
-
-
-
-
-
8
14
18
10
10
2.4
3.2
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-1.7A
- - -1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
WWW.SEMI-ONE.COM
Page 2


Part Number PE4953
Description P-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
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