PE10N10 datasheet, mosfet equivalent, semi one

Features and benefits

* VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .

Application

General Features
* VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
* High density cell design for ult.

Description

The PE10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
* High de.

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