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PE10N10 Datasheet Preview

PE10N10 Datasheet

N-Channel Enhancement Mode Power MOSFET

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PE10N10
N-Channel Enhancement Mode Power MOSFET
Description
The PE10N10 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =100V,ID =9.6A
RDS(ON) < 130m@ VGS=10V (Typ:105m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Marking and pin assignment
TO-252-2L top view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
9.6
6.5
58
30
0.24
150
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
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Page 1




semi one

PE10N10 Datasheet Preview

PE10N10 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
PE10N10
RθJC
4.17 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
100 110
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.2 1.8
2.5
V
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VGS=10V, ID=5A
VDS=25V,ID=6A
- 105
3.5 -
140
-
m
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 690
- 120
-
-
PF
PF
Crss
- 90
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 11
-
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
- 7.4
- 35
- 9.1
-
-
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30V,ID=3A,
VGS=10V
- 15.5
- 3.2
- 4.7
-
-
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=9A
- - 1.2
V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS
- - 9.6
A
trr
TJ = 25°C, IF =6A
- 21
nS
Qrr
di/dt = 100A/μs(Note3)
- 97
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
WWW.SEMI-ONE.COM
Page 2


Part Number PE10N10
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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