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PE10N10 - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number: PE10N10
Manufacturer: semi one
File Size: 837.31 KB
Datasheet: PE10N10-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

PE10N10 Product details

Description

The PE10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge..

Features

VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram Application.
Power switching application.
Hard switched and high frequency circuits.
Marking and pin assignment TO-252-2L top view Abso.

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N-Channel Enhancement Mode Power MOSFET semi one

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PE10N10 Stock/Price