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PE10N10 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: semi one

Overview: PE10N10 N-Channel Enhancement Mode Power MOSFET.

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Datasheet Details

Part number PE10N10
Manufacturer semi one
File Size 837.31 KB
Description N-Channel Enhancement Mode Power MOSFET
Download PE10N10 Download (PDF)

General Description

The PE10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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