PE1012E - N-Channel Enhancement Mode Power MOSFET

Description

The PE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 20V,ID =0.6A RDS(ON).

semi one

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Datasheet Details

Part number	PE1012E
Manufacturer	semi one
File Size	113.44 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE1012E Datasheet
Additional preview pages of the PE1012E datasheet.

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PE1012E N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID =0.6A RDS(ON) <700mΩ @ VGS=4.5V RDS(ON) <850mΩ @ VGS=2.

Published: Dec 3, 2018 |