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PE1012E Datasheet Preview

PE1012E Datasheet

N-Channel Enhancement Mode Power MOSFET

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PE1012E
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE1012E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
Battery protection or in other Switching application.
GENERAL FEATURES
VDS = 20V,ID =0.6A
RDS(ON) <700m@ VGS=4.5V
RDS(ON) <850m@ VGS=2.5V
High Power and current handing capability
Lead free product is acquired
Gate-Source ESD Protection
Application
Battery operated Systems
Load/ power Switching Cell Phones,Pagers
Power Supply Converter Circuits
Schematic diagram
Marking and pin Assignment
SOT-523 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Limit
20
±10
0.6
1
150
-55 To 150
Unit
V
V
A
A
mW
125 /W
Min Typ Max Unit
20 22
-
V
WWW.SEMI-ONE.COM
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PE1012E Datasheet Preview

PE1012E Datasheet

N-Channel Enhancement Mode Power MOSFET

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PE1012E
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VDS=16V,VGS=0V
VGS=±4.5V,VDS=0V
VDS=VGS,ID=250μA
VGS=2.5V, ID=0.5A
VGS=4.5V, ID=0.6A
VDS=10V,ID=0.4A
- 0.3 100
- - ±1
nA
μA
0.5 0.75
- 530
- 410
-1
1.2
850
700
-
V
m
m
S
Clss
- 100
-
PF
VGS = 0 V, f = 1.0 MHz,
Coss
- 16
-
PF
VDS = 16 V
Crss
- 12
-
PF
td(on)
V = 10 V, R = 47
-5
-
tr
-5
-
ID= 200 mA,
td(off)
VGEN = 4.5 V, RG = 10
-
25
-
tf
- 11
-
Qg
- 750
-
VDS = 10 V, VGS = 4.5 V,
Qgs
- 75
-
ID = 250 mA
Qgd
- 225
-
nS
nS
nS
nS
pC
pC
pC
VSD
VGS=0V,IS=0.6A
- 0.75 1.2
V
IS
- - 0.6
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
WWW.SEMI-ONE.COM
Page 2


Part Number PE1012E
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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