PE1012E mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =0.6A RDS(ON) <700mΩ @ VGS=4.5V RDS(ON) <850mΩ @ VGS=2.5V
* High Power and current handing capability
* Lead free product is acquired
* Gat.
The PE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application.
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