Full PDF Text Transcription for PE1012A (Reference)
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PE1012A. For precise diagrams, and layout, please refer to the original PDF.
PE1012A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE1012A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with g...
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ogy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 0.8A ● RDS(ON) <300mΩ @ VGS=4.5V ● RDS(ON) <350mΩ @ VGS=2.5V ● RDS(ON) <600mΩ @ VGS=1.
PE1012A Datasheet
