PE1012A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID = 0.8A
* RDS(ON) <300mΩ @ VGS=4.5V
* RDS(ON) <350mΩ @ VGS=2.5V
* RDS(ON) <600mΩ @ VGS=1.8V
* High Power and current handing capability .
The PE1012A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
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