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PE1012A Datasheet Preview

PE1012A Datasheet

N-Channel Enhancement Mode Power MOSFET

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PE1012A
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE1012A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
GENERAL FEATURES
VDS = 20V,ID = 0.8A
RDS(ON) <300m@ VGS=4.5V
RDS(ON) <350m@ VGS=2.5V
RDS(ON) <600m@ VGS=1.8V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
Load switch
Power management
Schematic diagram
3D
G1
2S
Marking and pin Assignment
SOT-23 top view
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
20
±10
0.8
0.4
2.8
0.8
0.5
0.2
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
WWW.SEMI-ONE.COM
Page 1




semi one

PE1012A Datasheet Preview

PE1012A Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

PE1012A
Electrical Characteristics (TA=25к Unless otherwise noted)
Static
Parameter
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=250uA
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS VDS=0V,VGS=±10V
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
IDSS
ID(on)
RDS(on)
gFS
VDS=16V,VGS=0V
VDS=16V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=4.5V,ID=0.8A
VGS=2.5V,ID=0.5A
VGS=1.8V,ID=0.3A
VDS=10V,ID=0.8A
Diode Forward Voltage
VSD IS=0.8A,VGS=0V
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=10V,VGS=0V
f=1MHz
VDS=10V,VGS=4.5V
ID0.8A
VDD=10V,RL=20
ID0.8A,VGEN=4.5V
RG=1
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Min. Typ Max. Unit
20 V
0.3 0.8
±10 u A
1
5 uA
0.8 A
220 300
260 350 m
500 600
1S
0.65 1.2 V
70
20
8
1.06
0.18
0.32
18
20
70
25
pF
1.38
nC
26
28
110
ns
40
WWW.SEMI-ONE.COM
Page 2


Part Number PE1012A
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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