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PE1011E Datasheet Preview

PE1011E Datasheet

P-Channel Enhancement Mode Power MOSFET

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PE1011E
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE1011E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
Battery protection or in other Switching application.
GENERAL FEATURES
VDS = -20V,ID =-0.6A
RDS(ON) <700m@ VGS=-4.5V
RDS(ON) <860m@ VGS=-2.5V
High Power and current handing capability
Lead free product is acquired
Gate-Source ESD Protection
Application
Battery operated Systems
Load/ power Switching Cell Phones,Pagers
Power Supply Converter Circuits
Schematic diagram
Marking and pin Assignment
SOT-523 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-20
±8
-0.6
-1
150
-55 To 150
Unit
V
V
A
A
mW
125 /W
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semi one

PE1011E Datasheet Preview

PE1011E Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

Electrical Characteristics (TA=25unless otherwise noted)
Static
Parameter
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=-250uA
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=-250uA
Gate Leakage Current
IGSS VDS=0V,VGS=±12V
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
IDSS
ID(on)
RDS(on)
gFS
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=-4.5V,ID=-0.6A
VGS=-2.5V,ID=-0.5A
VGS=-1.8V,ID=-0.4A
VDS=-10V,ID=-0.4A
Diode Forward Voltage
VSD IS=-0.15A,VGS=0V
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Ciss
Coss
VDS=-10V,VGS=0V
f=1MHz
Crss
Qg
Qgs
Qgd
VDS=-10V,VGS=-4.5V
ID-0.25A
td(on)
tr
td(off)
VDD=-10V,RL=30
ID-0.2A,VGEN=-4.5V
RG=10
tf
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
PE1011E
Min. Typ Max. Unit
-20
V
-0.4 -1.0
±100 nA
-1
uA
-5
0.7 A
600 700
700 860 m
1000 1450
1S
0.65 1.2 V
70 100
20 pF
10
1.0 1.3
0.1 nC
0.3
10 15
10
40
15
60
ns
30 50
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Part Number PE1011E
Description P-Channel Enhancement Mode Power MOSFET
Maker semi one
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