PE1011E mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID =-0.6A RDS(ON) <700mΩ @ VGS=-4.5V RDS(ON) <860mΩ @ VGS=-2.5V
* High Power and current handing capability
* Lead free product is acquired
*.
The PE1011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application.
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