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PE1011E Datasheet, semi one

PE1011E mosfet equivalent, p-channel enhancement mode power mosfet.

PE1011E Avg. rating / M : 1.0 rating-11

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PE1011E Datasheet

Features and benefits


* VDS = -20V,ID =-0.6A RDS(ON) <700mΩ @ VGS=-4.5V RDS(ON) <860mΩ @ VGS=-2.5V
* High Power and current handing capability
* Lead free product is acquired
*.

Description

The PE1011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES

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TAGS

PE1011E
P-Channel
Enhancement
Mode
Power
MOSFET
PE1012A
PE1012E
PE1000D-10F
semi one

Manufacturer


semi one
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