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PE1011E - P-Channel Enhancement Mode Power MOSFET

PE1011E Description

PE1011E P-Channel Enhancement Mode Power MOSFET .
The PE1011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

PE1011E Features

* VDS = -20V,ID =-0.6A RDS(ON)

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Datasheet Details

Part number
PE1011E
Manufacturer
semi one
File Size
608.40 KB
Datasheet
PE1011E-semione.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET semi one
semi one PE1011E-like datasheet