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PE02N05A Datasheet Preview

PE02N05A Datasheet

N-Channel Enhancement Mode Power MOSFET

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PE02N05A
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE02N05A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
GENERAL FEATURES
VDS =60V,ID =2.8A
RDS(ON) <100m@ VGS=10V
RDS(ON) < 115m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
Battery Switch
DC/DC Converter
D
G
S
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
60
±20
2.8
10
1.7
-55 To 150
73.5
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Min Typ Max Unit
60 - -
--
1
V
μA
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Page 1




semi one

PE02N05A Datasheet Preview

PE02N05A Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IGSS
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=2.8A
VGS=4.5V, ID=2.8A
VGS=2.5V, ID =2A
PE02N05A
- - ±100 nA
0.5 1.0 1.5
- 87 100
- 95 115
- 130 150
V
m
m
m
VDS=30V,VGS=0V,
F=1.0MHz
- 247
- 34
- 19.5
-
-
-
PF
PF
PF
VDD=30V,ID=1.5A
VGS=10V,RGEN=1
VDS=30V,ID=2.5A,
VGS=4.5V
-6
- 15
- 15
- 10
-6
-1
- 1.3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=2.5A
- - 1.2
--
3
V
A
WWW.SEMI-ONE.COM
Page 2


Part Number PE02N05A
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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