PE025N03 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =20V,ID =110A RDS(ON) <2.0 mΩ @ VGS=4.5V RDS(ON) <2.5mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltag.
General Features
* VDS =20V,ID =110A RDS(ON) <2.0 mΩ @ VGS=4.5V RDS(ON) <2.5mΩ @ VGS=2.5V
* High density cell d.
The PE025N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =20V,ID =110A RDS(ON) <2.0 mΩ @ VGS=4.5V RDS(ON) <2.5mΩ @ VGS=2.5V.
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