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PE025N03 Datasheet Preview

PE025N03 Datasheet

N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET
Description
The PE025N03 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =20V,ID =110A
RDS(ON) <2.0 m@ VGS=4.5V
RDS(ON) <2.5m@ VGS=2.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
PE025N03
Schematic diagram
PDFN5x6-8L top view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
110
105
600
130
0.87
1700
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
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semi one

PE025N03 Datasheet Preview

PE025N03 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
PE025N03
RθJC
1.15 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
20 -
-
V
VDS=20V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IGSS
VGS(th)
VGS=±12V,VDS=0V
VDS=VGS,ID=250μA
- - ±100
0.5 0.75 1.2
nA
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=20A
VGS=2.5V, ID=15A
- 1.5 2.0
- 1.8 2.5
m
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=8V, I D=20A
32 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
- 5000
-
PF
VDS=10V,VGS=0V,
Coss
- 1135
-
PF
F=1.0MHz
Crss
- 563
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
- 26
VDD=10V,ID=2A,RL=15- 24
VGS=8V, R G=2.5
- 91
-
-
-
nS
nS
nS
Turn-Off Fall Time
tf
- 39
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 38
VDS=10V,ID=30A,
Qgs - 9
VGS=8V
Qgd - 13
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=10A
-
1.2 V
IS
- - 150
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 40A
- 42
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 39
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=20V,VG=10V,L=1mH,Rg=25IAS=58.5A
WWW.SEMI-ONE.COM
Page 2


Part Number PE025N03
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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