PE025N03 - N-Channel Enhancement Mode Power MOSFET

semi one

General Description

The PE025N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =20V,ID =110A RDS(ON).

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PE025N03 n-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PE025N03
Manufacturer	semi one
File Size	525.78 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE025N03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The PE025N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =110A RDS(ON) <2.0 mΩ @ VGS=4.5V RDS(ON) <2.5mΩ @ VGS=2.