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PE0213 Datasheet Preview

PE0213 Datasheet

N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET
Description
The PE0213 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 200V,ID =13A
RDS(ON) <140m@ VGS=10V
(Typ:123m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Boost converters
LED backlighting
Uninterruptible power supply
PE0213
Schematic diagram
TO-220-3L top view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
ID (100)
Drain Current-Continuous(TC=100)
IDM Pulsed Drain Current
PD Maximum Power Dissipation
Derating factor
EAS Single pulse avalanche energy (Note 5)
TJ,TSTG
Operating Junction and Storage Temperature Range
Limit
200
±20
13
9
45
95
0.6
200
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
www.semi-one.com
Page 1
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semi one

PE0213 Datasheet Preview

PE0213 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Thermal Characteristic
RθJC
Thermal Resistance, Junction-to-Case (Note 2)
PE0213
1.6 /W
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Condition
Min Typ Max Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
On Characteristics (Note 3)
VGS=0V ID=250μA
VDS=200V,VGS=0V
VGS=±20V,VDS=0V
200 -
--
--
-
1
±100
V
μA
nA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Drain-Source On-State Resistance
gFS Forward Transconductance
Dynamic Characteristics (Note4)
VDS=VGS,ID=250μA
VGS=10V, ID=8A
VDS=10V,ID=8A
23
4
- 123 140
-6
-
V
m
S
Clss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 4)
VDS=25V,VGS=0V,
F=1.0MHz
- 2000
- 260
- 150
-
-
-
PF
PF
PF
td(on)
Turn-on Delay Time
- 11.5
-
nS
tr
Turn-on Rise Time
VDD=100V,RG=8
- 22
-
nS
td(off)
Turn-Off Delay Time
VGS=10V,ID=8A
- 18
-
nS
tf Turn-Off Fall Time
- 10
-
nS
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=160V,ID=8A,
VGS=10V
- 27
- 4.4
- 11.6
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
VSD Diode Forward Voltage (Note 3)
IS Diode Forward Current (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V,IS=8A
-
TJ = 25°C, IF = 8A
di/dt = 100A/μs(Note3)
- - 1.2
- - 13
- 32
-
- 53
-
V
A
nS
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
www.semi-one.com
Page 2
V1


Part Number PE0213
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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