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PE0208 Datasheet Preview

PE0208 Datasheet

N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET
Description
The PE0208 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =200V,ID =16A
RDS(ON) <300m@ VGS=10VTyp260m
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
PE0208
Schematic diagram
Marking and pin assignment
TO-252 -2Ltop view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
www.semi-one.com
Page 1
Limit
200
±20
16
5.6
20
55
-55 To 150
Unit
V
V
A
A
A
W
v1.0




semi one

PE0208 Datasheet Preview

PE0208 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=200V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4.5A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=25V,ID=4.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=100V,ID=4.5A
VGS=10V,RGEN=5
VDS=160V,ID=4.5A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=4.5A
IS
PE0208
2.3 /W
Min Typ Max Unit
200 215
--
--
-
1
±100
V
μA
nA
1 1.7 2.5
- 260 300
3-
-
V
m
S
540 PF
90 PF
35 PF
- 6.4
- 11
- 20
- 12
- 16
- 3.4
- 5.1
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
16
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
www.semi-one.com
Page 2
v1.0


Part Number PE0208
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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