PE0208
PE0208 is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
Description
The PE0208 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =200V,ID =16A RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ）
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram Marking and pin assignment
TO-252 -2Ltop view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
.semi-one.
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