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PE01N85T Datasheet Preview

PE01N85T Datasheet

N-Channel Trench Power MOSFET

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N-Channel Trench Power MOSFET
General Description
The PE01N85T is N -channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM, load
switching especially for E-Bike controller applications.
Features
VDS=100V; ID=85A@ VGS=10V;
RDS(ON)<10.5mΩ @ VGS=10V
Special Designed for E-Bike Controller Application
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
72V E-Bike controller applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
PE01N85T
To-220 Top View
Schematic Diagram
VDS = 100V
ID= 85A
RDS(ON)= 8.7mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
PE01N85T
PE01N85T
TO-220
Reel Size
-
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation(Tc=25)
Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=50V,VG=10V, RG=25Ω
Tape width
-
Quantity
-
Value
100
±25
85
60
340
168
576
-55 To 175
Unit
V
V
A
A
A
W
mJ
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V1.0




semi one

PE01N85T Datasheet Preview

PE01N85T Datasheet

N-Channel Trench Power MOSFET

No Preview Available !

Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
PE01N85T
Value
0.89
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
Min
On/Off States
BVDSS
IDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V ID=250μA
VDS=100V,VGS=0V
VDS=100V,VGS=0V
100
IGSS Gate-Body Leakage Current
VGS=±20V,VDS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS,ID=250μA
2
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=40A
Typ
8.7
Max Unit
1
10
±100
4
10.5
V
μA
μA
nA
V
Dynamic Characteristics
gFS Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Times
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
VDS=10V,ID=15A
VDS=25V,VGS=0V
f=1.0MHz
VDS=50V,ID=40A
VGS=10V
20
7226
425
55
140
27
38
VDD=65V,ID=40A,RL=15Ω
VGS=10V,RG=2.5Ω
25
29
53
63
S
PF
PF
PF
nC
nC
nC
nS
nS
nS
nS
Source-Drain Diode Characteristics
ISD Source-Drain Current(Body Diode)
85 A
ISDM Pulsed Source-Drain Current(Body Diode)
VSD Forward On Voltage(Note 1)
trr Reverse Recovery Time(Note 1)
Qrr Reverse Recovery Charge(Note 1)
TJ=25,ISD=40A,VGS=0V
TJ=25,IF=40A
di/dt=100A/μs
340 A
0.6 1 V
95 nS
189 nC
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25
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-2-
V1.0


Part Number PE01N85T
Description N-Channel Trench Power MOSFET
Maker semi one
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