Datasheet4U Logo Datasheet4U.com

PE0053A - N-Channel Enhancement Mode Power MOSFET

General Description

The PE0053A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS =55V,ID =3A RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number PE0053A
Manufacturer semi one
File Size 183.45 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE0053A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE0103A N-Channel Power MOSFET ChipSourceTek
PE013012 General Purpose Relays TE
PE014005 General Purpose Relays TE
PE014006 General Purpose Relays TE
PE014012 General Purpose Relays TE

Other Datasheets by semi one

Part Number Description
PE0053 N-Channel Enhancement Mode Power MOSFET
PE0102A N-Channel Enhancement Mode Power MOSFET
PE0106R N-Channel Enhancement Mode Power MOSFET
PE01H18T N-Channel Trench Power MOSFET
PE01N85T N-Channel Trench Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE0053A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE0053A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =55V,ID =3A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.