PE0053 - N-Channel Enhancement Mode Power MOSFET

semi one

Description

The PE0053 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS =55V,ID =3A RDS(ON).

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PE0053 n-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PE0053
Manufacturer	semi one
File Size	210.67 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE0053 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE0053 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE0053 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =55V,ID =3A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.