Full PDF Text Transcription for PE0053 (Reference)
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PE0053. For precise diagrams, and layout, please refer to the original PDF.
PE0053 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE0053 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gat...
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y to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =55V,ID =3A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.
PE0053 Datasheet
