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UF3C065080B7S Datasheet, qorvo

UF3C065080B7S fet equivalent, sic fet.

UF3C065080B7S Avg. rating / M : 1.0 rating-12

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UF3C065080B7S Datasheet

Features and benefits

w On-resistance RDS(on): 85mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 69nC w Low body diode VFSD: 1.54V w Low gate charge: QG = 23n.

Application

Any controlled environment such as w Telecom and Server Power w Industrial power supplies w Power factor correction mod.

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “dr.

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TAGS

UF3C065080B7S
SiC
FET
UF3C065080B3
UF3C065080T3S
UF3C065030B3
qorvo

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