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PSMNR90-40YLH - N-channel MOSFET

General Description

300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

2.

Key Features

  • 300 A continuous ID(max).
  • Avalanche rated, 100% tested.
  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
  • Strong linear-mode / SOA rating.
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology.
  • High reliabilit.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMNR90-40YLH N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 26 April 2019 Product data sheet 1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2.