PSMNR58-30YLH Datasheet, nexperia

* 100% avalanche tested at I(AS) = 190 A
* Optimized for low RDSon
* Low leakage < 1 µA at 25 °C
* Low spiking and ringing for low EMI designs
* Optim.

2. Features and benefits
* 100% avalanche tested at I(AS) = 190 A
* Optimized for low RDSon
* Low leakage .

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications. 2. Feature.