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PSMN9R5-100PS Datasheet Preview

PSMN9R5-100PS Datasheet

N-channel MOSFET

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PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
17 October 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive
3. Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 13
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 60 A; VDS = 50 V;
Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 89 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω
Min Typ Max Unit
- - 100 V
- - 89 A
- - 211 W
- 8.16 9.6 mΩ
- 23 - nC
- 82 - nC
- - 177 mJ




nexperia

PSMN9R5-100PS Datasheet Preview

PSMN9R5-100PS Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN9R5-100PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
PSMN9R5-100PS
Marking code
PSMN9R5-100PS
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 100 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
PSMN9R5-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 63 A
- 89 A
- 355 A
© Nexperia B.V. 2017. All rights reserved
2 / 13


Part Number PSMN9R5-100PS
Description N-channel MOSFET
Maker nexperia
Total Page 13 Pages
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