PSMN6R0-30YL mosfet equivalent, n-channel mosfet.
* High efficiency due to low switching and conduction losses
* Suitable for logic level gate drive sources
1.3 Applications
* Class-D amplifiers
* DC-to.
1.2 Features and benefits
* High efficiency due to low switching and conduction losses
* Suitable for logic l.
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.
1.2 Features and benefits
* High .
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