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PSMN3R9-100YSF - N-channel MOSFET

General Description

NextPower 100 V, standard level gate drive MOSFET.

Qualified to 150 °C and recommended for industrial and consumer applications.

2.

Key Features

  • Low Qrr for higher efficiency and lower spiking.
  • 120 A ID (max).
  • demonstrated continuous current rating.
  • Low QG × RDSon FOM for high efficiency switching.

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Full PDF Text Transcription (Reference)

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PSMN3R9-100YSF NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package 17 February 2020 Preliminary data sheet 1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 150 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 120 A ID (max) – demonstrated continuous current rating • Low QG × RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK56 package • Wave-solderable LFPAK56 package 3.