Datasheet4U Logo Datasheet4U.com

PSMN3R3-60PL - N-channel MOSFET

General Description

Logic level N-channel MOSFET in SOT78 using TrenchMOS technology.

Product design and manufacture has been optimized for use in battery operated power tools.

2.

Key Features

  • High efficiency due to low switching & conduction losses.
  • Robust construction for demanding.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PSMN3R3-60PL MOSFET NXP Semiconductors
PSMN3R3-40YS N-channel LFPAK 40 V 3.3 m standard level MOSFET NXP
PSMN3R3-80BS MOSFET NXP Semiconductors
PSMN3R3-80ES N-channel MOSFET NXP Semiconductors
PSMN3R3-80PS N-channel MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PSMN3R3-100SSF N-channel MOSFET
PSMN3R3-40MLH N-channel MOSFET
PSMN3R3-40YS N-channel MOSFET
PSMN3R3-80BS N-channel MOSFET
PSMN3R3-80ES N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PSMN3R3-60PL N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 7 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for demanding applications • Logic level gate 3. Applications • Battery-powered tools • Load switching • Motor control • Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig.